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4” SAPPHIRE SUBSTRATE PTSS100

4” SAPPHIRE SUBSTRATE PTSS100

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  • High reliability for low cost
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  • Used for GaN Epitaxial
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  • High thermal stability
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  • Outstanding chemical resistance and mechanical strength
TYPE PTSS100
DIMENSIONS DIAMETER 100 ± 0.15 mm
DIMENSIONS THICKNESS 650 ± 10 µm
DIMENSIONS PRIMARY FLAT LENGTH 30 ± 1 mm
DIMENSIONS EDGE CHAMFERING 45° (Can be customized)
ORIENTATION SURFACE ORIENTATION M-axis 0.2 ± 0.1°
ORIENTATION SURFACE ORIENTATION A-axis 0 ± 0.1°
ORIENTATION PRIMARY FLAT ORIENTATION
A-axis
0 ± 0.3°
FLATNESS BOW -15 µm ≤ BOW ≤ 0 µm
FLATNESS TTV ≤10 µm
FLATNESS LTV ≤2 µm (10 mm x 10 mm)
SURFACE CONDITION FRONT SURFACE QUALITY Epitaxial ready (Ra≤3Å)
SURFACE CONDITION BACK SURFACE ROUGHNESS 0.8 - 1.2 µm
SURFACE CONDITION CLEANNESS Partical (Size > 0.3 µm) Number should be less than 100
SURFACE CONDITION DEFECTS No crack, No pores, No scratch, No inclusions, No twins
SURFACE CONDITION LASER MARK Can be customized
MATERIAL QUALITY ≥99.996% AL2O3 Mono-crystalline AL2O3
PACKAGE Wafers are packed in cleaned wafer cassettes
containing 25 wafers under clean room environment

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